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[pdf] Designers connect power supplies in parallel to obtain a total output current greater than that available from one individual supply as well as to provide redundancy, enhance reliability, avoid PCB thermal issues and boost system efficiency. . Compared with traditional silicon devices, silicon carbide power MOSFETs have the advantages of lower on-state resistance (R DS (on)) for a given voltage rating, lower switching losses from much faster switching speeds and the ability to operate at higher junction temperatures. The current rating. . Several dice are usually connected in parallel within high current power modules. IGBT and MOSFET modules must then be paralleled to increase current capability sufficient for systems with several hundreds of kW of output power. Let's suppose MOSFETs like ideal switches. Static: link to RDS(on) spread.
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